Multiple exposure microlithography patterning method
US4373018A · kind A · utility
19Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1981 |
| Grant date | Feb 8, 1983 |
| Priority date | — |
| Expiry date | Jun 5, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
High-resolution patterning of a device surface is effected by a method which involves the use of a multi-layer resist structure. An organic resist layer is on the surface to be patterned, and an inorganic resist layer is on the organic resist layer. A pattern is produced in the inorganic layer by exposure to actinic radiation and, after development of the inorganic layer, the pattern is replicated in the organic layer by additional exposure to actinic radiation. The pattern is then developed in the organic layer so as to leave exposed surface portions to be affected by a fabrication agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.