Method of growing oxide layer on indium gallium arsenide
US4374867A · kind A · utility
13Cited by
0References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1981 |
| Grant date | Feb 22, 1983 |
| Priority date | — |
| Expiry date | Nov 6, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a water insoluble native plasma oxide on an In.sub.0.53 Ga.sub.0.47 As layer of the type that is useful in the fabrication of MOS type devices is disclosed. Oxygen is bubbled through a water chamber in order to introduce water vapor into the growth chamber during the growing process. The InGaAs layer is first sputter etched in the oxygen plasma while a negative potential is applied to the semiconductor structure. The pressure is then increased and the oxides are grown while a positive potential is applied to the semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.