Method of making fault-free surface zone in semiconductor devices by step-wise heat treating
US4376657A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1980 |
| Grant date | Mar 15, 1983 |
| Priority date | — |
| Expiry date | Dec 5, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/128
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a gettering method for processing semiconductor wafers a semiconductor wafer such as a silicon wafer is first annealed in a non-oxidizing atmosphere, for example, in a nitrogen atmosphere, at a temperature in the range of 950.degree. to 1,300.degree. C., preferably at 1,050.degree. C., for more than 10 minutes, for example for four (4) hours, to diffuse out oxygen near the surfaces of the semiconductor wafer. Then the semiconductor wafer is annealed at a temperature in the range of 600.degree. to 800.degree. C., for example at 650.degree. C., for more than one hour, preferably for 16 hours, to create in the interior of the semiconductor wafer microdefects of high density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.