Patent · US Expired

Plasma-assisted etch process with endpoint detection

US4377436A · kind A · utility

29Cited by
3References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 5, 1981
Grant dateMar 22, 1983
Priority date—
Expiry dateNov 5, 2001

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N21/76
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Endpoint detection during plasma-assisted etching is signalled by cessation or onset of spatially confined luminescence resulting from an etch reaction product. Sensitivity of the system is aided by an optically focused detector which selectively detects such fluorescence as associated with one or a small number of lithographic features.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.