Device lithography by selective ion implantation

US4377437A · kind A · utility

Assignee

• Bell Telephone Laboratories, Inc. · US

Inventors

• Gary N. Taylor · Bound Brook, US
• Thirumalai Venkatesan · Plainfield, US

Key dates

• Filing date: May 22, 1981
• Grant date: Mar 22, 1983
• Expiry date: May 22, 2001

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31155
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A method is shown whereby implanted ions, for example indium or gallium ions, are used to selectively define a pattern on a material, typically a polymer. The implanted regions react with a plasma (for example, an oxygen plasma) to form a patterned, nonvolatile protective layer (e.g., indium oxide or gallium oxide) on the material. Subsequent etching, which can typically be accomplished by the same plasma, produces a negative tone pattern. Materials other than polymers can be utilized. For example, an indium implant in SiO.sub.2 allows direct pattern generation by exposure to a fluorine plasma, without the use of a separate polymeric resist.