Method of manufacturing semiconductor device using laser beam crystallized poly/amorphous layer
US4377902A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1980 |
| Grant date | Mar 29, 1983 |
| Priority date | — |
| Expiry date | Sep 3, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/092
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprising a step of forming a desired opening in an insulating film formed on a single-crystalline semiconductor substrate, a step of forming an impurity-doped amorphous or polycrystalline semiconductor layer to cover the surface of said insulating film and the exposed surface of said semiconductor substrate in said opening, and a step of irradiating said semiconductor layer with a laser beam to let a portion of said semiconductor layer on said insulating film be polycrystallized or remain polycrystalline and let a portion of said semiconductor layer on said semiconductor substrate be single-crystallized to form a junction between said single-crystallized semiconductor layer portion and said semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.