Method of fabricating a narrow band-gap semiconductor CCD imaging device
US4377904A · kind A · utility
13Cited by
5References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 9, 1980 |
| Grant date | Mar 29, 1983 |
| Priority date | — |
| Expiry date | Sep 9, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/084
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is provided for signal channel definition. Second level insulation (ZnS) is substantially thicker than the first level, and is provided with a stepped or sloped geometry under the first level gates. Input and output diodes are provided with MIS guard rings to increase breakdown voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.