Method of making semiconductor devices
US4379001A · kind A · utility
18Cited by
14References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1979 |
| Grant date | Apr 5, 1983 |
| Priority date | — |
| Expiry date | Jul 18, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device such as a bipolar transistor and a field effect transistor of the type having a substrate, a doped polycrystalline silicon region selectively formed on the substrate and an insulating film overlying the polycrystalline silicon region, the region is shaped as mesa having side surfaces with a negative coefficient of gradient between the substrate and the top of the mesa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.