Self-aligned photoresist process
US4379833A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1981 |
| Grant date | Apr 12, 1983 |
| Priority date | — |
| Expiry date | Dec 31, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/2054
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A self-aligned photoresist process for selectively covering a pattern on a substrate with photoresist without using a mask or needing an alignment step. It may be used when the pattern to be covered or not covered has a much different reflectivity than the non-pattern areas. A photoresist layer is deposited over the substrate and exposed to a flood beam. The higher reflectivity regions reflect much more exposing radiation and cause increased exposure in the regions overlying the higher reflectivity pattern. Upon development, the more exposed regions (or in the case of a negative resist, the less exposed regions) preferentially develop away, leaving a resist pattern corresponding with the reflective pattern and aligned therewith. This process can be used, for example, to cover a substrate with resist everywhere except at metallized areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.