Michael Hatzakis
32Patents
16h-index
39Co-inventors
81Inventor score
Filing activity: Mar 5, 1975 → Sep 11, 1998
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4212935A | Method of modifying the development profile of photoresists | Physics | 81 | Expired |
| US5171992A | Nanometer scale probe for an atomic force microscope, and method for making same | Emerging Cross-Sectional Technologies | 65 | Expired |
| US4142107A | Resist development control system | Physics | 59 | Expired |
| US4086870A | Novel resist spinning head | Performing Operations; Transporting | 42 | Expired |
| US6097019A | Radiation control system | Electricity | 41 | Expired |
| US4581100A | Mixed excitation plasma etching system | Electricity | 32 | Expired |
| US5837978A | Radiation control system | Emerging Cross-Sectional Technologies | 28 | Expired |
| US3984582A | Method for preparing positive resist image | Emerging Cross-Sectional Technologies | 27 | Expired |
| US4035522A | X-ray lithography mask | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4156745A | Electron sensitive resist and a method preparing the same | Physics | 26 | Expired |
| US4782008A | Plasma-resistant polymeric material, preparation thereof, and use thereof | Physics | 25 | Expired |
| US5059512A | Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions | Emerging Cross-Sectional Technologies | 23 | Expired |
| US5241040A | Microwave processing | Emerging Cross-Sectional Technologies | 23 | Expired |
| US4024293A | High sensitivity resist system for lift-off metallization | Emerging Cross-Sectional Technologies | 21 | Expired |
| US3957552A | Method for making multilayer devices using only a single critical masking step | Electricity | 20 | Expired |
| US4087569A | Prebaking treatment for resist mask composition and mask making process using same | Emerging Cross-Sectional Technologies | 17 | Expired |
| US4379833A | Self-aligned photoresist process | Electricity | 16 | Expired |
| US5141817A | Dielectric structures having embedded gap filling RIE etch stop polymeric materials of high thermal stability | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4603195A | Organosilicon compound and use thereof in photolithography | Physics | 11 | Expired |
| US4693960A | Photolithographic etching process using organosilicon polymer composition | Emerging Cross-Sectional Technologies | 10 | Expired |
| US4981909A | Plasma-resistant polymeric material, preparation thereof, and use thereof | Physics | 9 | Expired |
| US5098816A | Method for forming a pattern of a photoresist | Physics | 8 | Expired |
| US5110711A | Method for forming a pattern | Physics | 7 | Expired |
| US4001061A | Single lithography for multiple-layer bubble domain devices | Electricity | 6 | Expired |
| US5041358A | Negative photoresist and use thereof | Physics | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.