Method of preparing semiconductor surfaces
US4380490A · kind A · utility
7Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1981 |
| Grant date | Apr 19, 1983 |
| Priority date | — |
| Expiry date | Mar 27, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of treating semiconductor surfaces to produce an abrupt dielectric discontinuity between the semiconductor bulk and the ambient is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.