High breakdown voltage semiconductor device
US4388635A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 1980 |
| Grant date | Jun 14, 1983 |
| Priority date | — |
| Expiry date | Jul 1, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
Abstract
A novel structure of a high breakdown voltage semiconductor device has a pair of major surfaces on which a pair of main electrodes are formed and a PN junction formed between the pair of major surfaces with a side surface to which the PN junction is exposed being covered with a passivation material. An auxiliary electrode of a conductive member is provided, which is disposed externally of the peripheral edge of the major surface of the semiconductor substrate, and which contacts to the passivation material and is electrically connected to the main electrode. When a voltage for reverse biasing the PN junction is applied between the pair of main electrodes, ions in the passivation material are collected by an electric field established in the passivation material so that the deterioration of the breakdown on the surface of the semiconductor substrate is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.