Method of structuring with metal oxide masks by reactive ion-beam etching

US4390394A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Josef Mathuni · Munich, DE
• Karin Unger · Munich, DE

Key dates

• Filing date: Jan 11, 1982
• Grant date: Jun 28, 1983
• Expiry date: Jan 11, 2002

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/95
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Very fine circuit structures in microelectronics are produced by first applying a thin metal oxide layer uniformly over an entire surface of a layer to be etched, then applying a resist layer uniformly over the entire metal oxide layer and structuring such oxide layer by ion-beam etching and, utilizing the structured oxide layer as a mask, performing a dry-etching with an ion beam of the metal layer lying thereunder so as to attain structures having very unfavorable resist height to etching depth ratios.