Josef Mathuni
15Patents
6h-index
15Co-inventors
63Inventor score
Filing activity: Jan 11, 1982 → Aug 30, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5945351A | Method for etching damaged zones on an edge of a semiconductor substrate, and etching system | Physics | 112 | Expired |
| US5693182A | Method for damage etching the back side of a semiconductor disk having a protected front side | Electricity | 22 | Expired |
| US5489362A | Method for generating excited neutral particles for etching and deposition processes in semiconductor technology with a plasma discharge fed by microwave energy | Fixed Constructions | 21 | Expired |
| US4390394A | Method of structuring with metal oxide masks by reactive ion-beam etching | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6013136A | Apparatus for plasma-supported back etching of a semiconductor wafer | Electricity | 9 | Expired |
| US5874366A | Method for etching a semiconductor substrate and etching system | Electricity | 9 | Expired |
| US6706141B1 | Device to generate excited/ionized particles in a plasma | Electricity | 6 | Expired |
| US5073515A | Method for manufacturing a trench capacitor of a one-transistor memory cell in a semiconductor substrate with a self-aligned capacitor plate electrode | Electricity | 4 | Expired |
| US7063921B2 | Photomask, in particular alternating phase shift mask, with compensation structure | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8815746B2 | Apparatus and method for producing microcomponents and use of | Performing Operations; Transporting | 0 | Active |
| US6919147B2 | Production method for a halftone phase mask | Physics | 0 | Expired |
| US6569772B2 | Method for producing an alternating phase mask | Physics | 0 | Expired |
| US7665416B2 | Apparatus for generating excited and/or ionized particles in a plasma and a method for generating ionized particles | Electricity | 0 | Active |
| US7071110B2 | Process for the plasma etching of materials not containing silicon | Physics | 0 | Expired |
| US6152073A | Assembly for the manufacture of highly integrated circuits on a semiconductor substrate | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.