Chromium-silicon-nitrogen resistor material
US4392992A · kind A · utility
34Cited by
11References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1981 |
| Grant date | Jul 12, 1983 |
| Priority date | — |
| Expiry date | Jun 30, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.