Structure with a silicon body having through openings

US4393127A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Johann Greschner · Neckartenzlingen, DE
• Georg Kraus · Konz, DE
• Gerhard Schmid · Mindelheim, DE

Key dates

• Filing date: Jul 17, 1981
• Grant date: Jul 12, 1983
• Expiry date: Jul 17, 2001

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/3171
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A structure for shaping or masking energetic radiation is described. The structure comprises a shallow silicon body having at least one through opening, and a metal silicide layer covering the surface of the structure. The structure characterized by having a high mechanical, and thermal stability may be used particularly in electron and X-ray lithography. More specifically, the structure may be used as an aperture for electron beams, or as a mask for X-rays. The production of the structure includes the steps of making through openings in the silicon body, and the forming of the silicide layer by vapor depositing a metal on the surface of the silicon body and by subsequent annealing.