Johann Greschner
69Patents
26h-index
57Co-inventors
91Inventor score
Filing activity: May 8, 1978 → Sep 6, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4502914A | Method of making structures with dimensions in the sub-micrometer range | Emerging Cross-Sectional Technologies | 299 | Expired |
| US4393127A | Structure with a silicon body having through openings | Emerging Cross-Sectional Technologies | 88 | Expired |
| US4806755A | Micromechanical atomic force sensor head | Emerging Cross-Sectional Technologies | 68 | Expired |
| US5283437A | Pneumatically and electrostatically driven scanning tunneling microscope | Emerging Cross-Sectional Technologies | 61 | Expired |
| US5051379A | Method of producing micromechanical sensors for the AFM/STM profilometry and micromechanical AFM/STM sensor head | Physics | 59 | Expired |
| US5283107A | Modular multilayer interwiring structure | Emerging Cross-Sectional Technologies | 56 | Expired |
| US5427599A | System for stamping an optical storage disk | Chemistry; Metallurgy | 56 | Expired |
| US4426584A | Method of compensating the proximity effect in electron beam projection systems | Electricity | 52 | Expired |
| US4589952A | Method of making trenches with substantially vertical sidewalls in silicon through reactive ion etching | Electricity | 52 | Expired |
| US5116462A | Method of producing micromechanical sensors for the AFM/STM profilometry | Physics | 48 | Expired |
| US4918033A | PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides | Emerging Cross-Sectional Technologies | 47 | Expired |
| US5814885A | Very dense integrated circuit package | Electricity | 44 | Expired |
| US4448865A | Shadow projection mask for ion implantation and ion beam lithography | Electricity | 44 | Expired |
| US6087199A | Method for fabricating a very dense chip package | Electricity | 41 | Expired |
| US4520314A | Probe head arrangement for conductor line testing with at least one probe head comprising a plurality of resilient contacts | Physics | 40 | Expired |
| US4732646A | Method of forming identically positioned alignment marks on opposite sides of a semiconductor wafer | Emerging Cross-Sectional Technologies | 40 | Expired |
| US5646339A | Force microscope and method for measuring atomic forces in multiple directions | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5578745A | Calibration standards for profilometers and methods of producing them | Emerging Cross-Sectional Technologies | 34 | Expired |
| US4522893A | Contact device for releasably connecting electrical components | Emerging Cross-Sectional Technologies | 33 | Expired |
| US4843315A | Contact probe arrangement for electrically connecting a test system to the contact pads of a device to be tested | Physics | 30 | Expired |
| US4642163A | Method of making adhesive metal layers on substrates of synthetic material and device produced thereby | Emerging Cross-Sectional Technologies | 30 | Expired |
| US5658472A | Method for producing deep vertical structures in silicon substrates | Electricity | 29 | Expired |
| US4871418A | Process for fabricating arbitrarily shaped through holes in a component | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5998868A | Very dense chip package | Electricity | 29 | Expired |
| US5635337A | Method for producing a multi-step structure in a substrate | Physics | 27 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.