Stacked polycrystalline silicon film of high and low conductivity layers
US4394191A · kind A · utility
29Cited by
10References
10Claims
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Key dates
| Filing date | Dec 17, 1980 |
| Grant date | Jul 19, 1983 |
| Priority date | — |
| Expiry date | Dec 17, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/934
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polycrystalline silicon film is implanted with an impurity in large amounts and is heated to be annealed, whereupon it is irradiated with a laser beam to be annealed. Thus, a polycrystalline silicon film of very low resistivity consisting of a second layer whose activated impurity concentration is equal to or below a solid solubility and a first layer whose activated impurity concentration is above the solid solubility is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.