Rare earth silicide Schottky barriers
US4394673A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1980 |
| Grant date | Jul 19, 1983 |
| Priority date | — |
| Expiry date | Sep 29, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28537
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the practice of this disclosure, rare earth disilicide low Schottky barriers (.ltorsim.0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of .gtorsim.0.7 eV) are also available by practice of this disclosure. A method is disclosed for forming contemporaneously high (.gtorsim.0.8 eV) and low (.ltorsim.0.4 eV) energy Schottky barriers on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. Illustratively, a double layer of Pt/on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.