King-Ning Tu
22Patents
10h-index
33Co-inventors
75Inventor score
Filing activity: Apr 16, 1975 → Sep 13, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6063506A | Copper alloys for chip and package interconnections | Emerging Cross-Sectional Technologies | 64 | Expired |
| US4394673A | Rare earth silicide Schottky barriers | Electricity | 57 | Expired |
| US3996095A | Epitaxial process of forming ferrite, Fe.sub.3 O.sub.4 and .gamma.Fe.sub.2 O.sub.3 thin films on special materials | Electricity | 44 | Expired |
| US6090710A | Method of making copper alloys for chip and package interconnections | Emerging Cross-Sectional Technologies | 42 | Expired |
| US4803539A | Dopant control of metal silicide formation | Electricity | 26 | Expired |
| US4728626A | Method for making planar 3D heterepitaxial semiconductor structures with buried epitaxial silicides | Electricity | 25 | Expired |
| US4001049A | Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5463254A | Formation of 3-dimensional silicon silicide structures | Electricity | 18 | Expired |
| US6280794A | Method of forming dielectric material suitable for microelectronic circuits | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5308794A | Aluminum-germanium alloys for VLSI metallization | Electricity | 14 | Expired |
| US10094033B2 | Electrodeposited nano-twins copper layer and method of fabricating the same | Emerging Cross-Sectional Technologies | 8 | Active |
| US5294486A | Barrier improvement in thin films | Emerging Cross-Sectional Technologies | 7 | Expired |
| US9476140B2 | Electrodeposited nano-twins copper layer and method of fabricating the same | Emerging Cross-Sectional Technologies | 5 | Active |
| US5504375A | Asymmetric studs and connecting lines to minimize stress | Electricity | 4 | Expired |
| US8575566B2 | Specimen box for electron microscope | Electricity | 3 | Active |
| US8405047B2 | Specimen box for electron microscope | Electricity | 2 | Active |
| US5882953A | Dopant activation of heavily-doped semiconductor by high current densities | Electricity | 2 | Expired |
| US7176129B2 | Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications | Electricity | 1 | Expired |
| US7772117B2 | Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications | Electricity | 1 | Active |
| US4980751A | Electrical multilayer contact for microelectronic structure | Electricity | 1 | Expired |
| US8835300B2 | Method for inhibiting growth of intermetallic compounds | Electricity | 0 | Active |
| US11688054B2 | Auxiliary prediction system for predicting reliability, and method and computer program product thereof | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.