Photoresist stripping composition and method
US4395348A · kind A · utility
72Cited by
6References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 23, 1981 |
| Grant date | Jul 26, 1983 |
| Priority date | — |
| Expiry date | Nov 23, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D7/34
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An organic photoresist stripping composition especially for use with silicon wafers having an insulating layer and metallization on the wafers contains an organic sulfonic acid and 1,2 dihydroxybenzene. The composition also preferably includes a polar or nonpolar, organic solvent. This composition will remove both positive and negative photoresist from wafers without attack on either aluminum metallization or silicon dioxide insulation layers when used to contact the photoresist on the wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.