Patent · US Expired

Method for the preparation of heat-resistant relief structures using positive resists

US4395482A · kind A · utility

48Cited by

3References

7Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Hellmut Ahne · Königsee, DE
Eberhard Kuhn · Hemhofen, DE
Roland Rubner · Königsee, DE

Key dates

Filing date	Apr 28, 1982
Grant date	Jul 26, 1983
Priority date	—
Expiry date	Apr 28, 2002

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/0233
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to heat-resistant positive resists based upon precursor stages of highly heat-resistant polymers and light-sensitive diazoquinones, as well as to a method for preparing heat-resistant relief structures of such positive resists. The positive resists of the type mentioned are developed in such a manner that they are heat-resistant as well as have a long storage life and are easily processed. The invention provides for the use of oligomer and/or polymer precursor stages of polyoxazoles in the form of polycondensation products of aromatic and/or heterocyclic dihydroxydiamino compounds and dicarboxylic acid chlorides or esters. The positive resists according to the invention are suitable especially for applications in microelectronics.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.