Method of forming groove isolation in a semiconductor device
US4396460A · kind A · utility
25Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 1982 |
| Grant date | Aug 2, 1983 |
| Priority date | — |
| Expiry date | May 21, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After filling grooves with a filling material, this filling material is etched by the use of a double-layer film which is made of substances different from each other. The side etching of the lower film of the double-layer film and the etching of the filling material are alternately performed in such a manner that each etching is carried out a plurality of number of times. Thus, the upper surface of the filling material contained in each groove can be flattened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.