Method for making non-alloyed heterojunction ohmic contacts
US4398963A · kind A · utility
10Cited by
6References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 19, 1980 |
| Grant date | Aug 16, 1983 |
| Priority date | — |
| Expiry date | Nov 19, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ultra low resistance heterojunction ohmic contacts to semiconductors such gallium arsenide (GaAs) is described wherein a single crystal layer of germanium degenerately doped with arsenic is deposited on gallium arsenide using molecular-beam epitaxy (MBE). A metallic film is then deposited over the single crystal layer of heavily doped germanium so as to obtain a non-alloyed heterojunction ohmic contact having a very low specific resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.