Richard A. Stall
15Patents
10h-index
27Co-inventors
72Inventor score
Filing activity: Nov 19, 1980 → Oct 10, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6001183A | Wafer carriers for epitaxial growth processes | Chemistry; Metallurgy | 426 | Expired |
| US5336324A | Apparatus for depositing a coating on a substrate | Chemistry; Metallurgy | 133 | Expired |
| US4838983A | Gas treatment apparatus and method | Chemistry; Metallurgy | 80 | Expired |
| US7084475B2 | Lateral conduction Schottky diode with plural mesas | Electricity | 78 | Expired |
| US6197121A | Chemical vapor deposition apparatus | Chemistry; Metallurgy | 46 | Expired |
| US7115896B2 | Semiconductor structures for gallium nitride-based devices | Electricity | 38 | Expired |
| US7235139B2 | Wafer carrier for growing GaN wafers | Chemistry; Metallurgy | 33 | Expired |
| US7863172B2 | Gallium nitride semiconductor device | Electricity | 22 | Active |
| US4772356A | Gas treatment apparatus and method | Emerging Cross-Sectional Technologies | 18 | Expired |
| US4969416A | Gas treatment apparatus and method | Emerging Cross-Sectional Technologies | 16 | Expired |
| US4398963A | Method for making non-alloyed heterojunction ohmic contacts | Electricity | 10 | Expired |
| US4592927A | Growth of oxide thin films using solid oxygen sources | Electricity | 9 | Expired |
| US7253015B2 | Low doped layer for nitride-based semiconductor device | Electricity | 8 | Expired |
| US5544618A | Apparatus for depositing a coating on a substrate | Chemistry; Metallurgy | 8 | Expired |
| US7436039B2 | Gallium nitride semiconductor device | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.