Composite metal and polysilicon field plate structure for high voltage semiconductor devices
US4399449A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1980 |
| Grant date | Aug 16, 1983 |
| Priority date | — |
| Expiry date | Nov 17, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A field plate structure is provided to terminate the electrode of a semiconductor device in a manner to reduce curvature of electric field within the body of the semiconductor device underlying the electrode and surrounding the electrode. A stepped electrode outer rim is provided in effect through the use of an underlying polysilicon which drapes over an underlying oxide. The main contact metal, typically aluminum, overlies the polysilicon but is upwardly displaced above the relatively thin polysilicon by a relatively thick oxide layer over the polysilicon. The composite effect of the thin polysilicon layer at one level and the heavier metallizing at a higher level but overlapping the polysilicon is that of a metal electrode deposited atop an insulation layer having two steps therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.