International Rectifier Corporation
1,233Patents
521Active
1,233Granted
56Portfolio score
Filing activity: Nov 14, 1973 → Oct 24, 2014 · 363 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6747300B2 | H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing | Electricity | 1,045 | Expired |
| US5977630A | Plural semiconductor die housed in common package with split heat sink | Electricity | 264 | Expired |
| US5814884A | Commonly housed diverse semiconductor die | Emerging Cross-Sectional Technologies | 258 | Expired |
| US6040626A | Semiconductor package | Electricity | 243 | Expired |
| US6204554A | Surface mount semiconductor package | Emerging Cross-Sectional Technologies | 196 | Expired |
| US4974059A | Semiconductor high-power mosfet device | Electricity | 185 | Expired |
| US5886397A | Crushable bead on lead finger side surface to improve moldability | Electricity | 182 | Expired |
| US6472254B2 | Integrated photovoltaic switch with integrated power device including etching backside of substrate | Emerging Cross-Sectional Technologies | 166 | Expired |
| US6452230B1 | High voltage mosgated device with trenches to reduce on-resistance | Electricity | 150 | Expired |
| US6608350B2 | High voltage vertical conduction superjunction semiconductor device | Electricity | 146 | Expired |
| US4593302A | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide | Electricity | 132 | Expired |
| US6043633A | Power factor correction method and apparatus | Emerging Cross-Sectional Technologies | 132 | Expired |
| US6259614A | Power factor correction control circuit | Emerging Cross-Sectional Technologies | 128 | Expired |
| US4376286A | High power MOSFET with low on-resistance and high breakdown voltage | Electricity | 118 | Expired |
| US7045884B2 | Semiconductor device package | Electricity | 115 | Expired |
| US7462908B2 | Dynamic deep depletion field effect transistor | Electricity | 111 | Active |
| US6624522B2 | Chip scale surface mounted device and process of manufacture | Electricity | 108 | Expired |
| US5581100A | Trench depletion MOSFET | Electricity | 102 | Expired |
| US6272015A | Power semiconductor module with insulation shell support for plural separate substrates | Electricity | 101 | Expired |
| US6194741A | MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance | Electricity | 97 | Expired |
| US4228806A | Sleep state inhibited wake-up alarm | Human Necessities | 96 | Expired |
| US6476443B1 | MOSgated device with trench structure and remote contact and process for its manufacture | Electricity | 95 | Expired |
| US6653740B2 | Vertical conduction flip-chip device with bump contacts on single surface | Electricity | 94 | Expired |
| US6580123B2 | Low voltage power MOSFET device and process for its manufacture | Electricity | 93 | Expired |
| US4680853A | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide | Electricity | 91 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.