Plasma deposition of silicon
US4401687A · kind A · utility
10Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1981 |
| Grant date | Aug 30, 1983 |
| Priority date | — |
| Expiry date | Nov 12, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method for plasma deposition of silicon from a silicon source gas. By inclusion of a halogen species in the gas flow stream, thermally induced deposition is inhibited so that plasma decomposition predominates. The silicon gas source may comprise the halogen species, which may alternatively be under separate control. The suppression of thermally induced deposition leads to improved thickness uniformity across the workpieces for significantly increased lifetime or runtime without the conductive plates shorting together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.