George Engle
14Patents
7h-index
6Co-inventors
59Inventor score
Filing activity: Aug 7, 1978 → May 8, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4401507A | Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions | Performing Operations; Transporting | 532 | Expired |
| US4223048A | Plasma enhanced chemical vapor processing of semiconductive wafers | Electricity | 84 | Expired |
| US4557943A | Metal-silicide deposition using plasma-enhanced chemical vapor deposition | Electricity | 83 | Expired |
| US5797195A | Nitrogen trifluoride thermal cleaning apparatus and process | Chemistry; Metallurgy | 14 | Expired |
| US4491606A | Spacer for preventing shorting between conductive plates | Electricity | 11 | Expired |
| US4401687A | Plasma deposition of silicon | Chemistry; Metallurgy | 10 | Expired |
| US4610748A | Apparatus for processing semiconductor wafers or the like | Electricity | 9 | Expired |
| US4873942A | Plasma enhanced chemical vapor deposition wafer holding fixture | Chemistry; Metallurgy | 5 | Expired |
| US5714011A | Diluted nitrogen trifluoride thermal cleaning process | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8133364B2 | Formation of photoconductive and photovoltaic films | Emerging Cross-Sectional Technologies | 1 | Active |
| US8195039B2 | Delivery of iodine gas | Emerging Cross-Sectional Technologies | 1 | Active |
| US7638413B2 | Method of fabricating semiconductor by nitrogen doping of silicon film | Electricity | 0 | Active |
| US8731383B2 | Delivery of iodine gas | Emerging Cross-Sectional Technologies | 0 | Active |
| US8061299B2 | Formation of photoconductive and photovoltaic films | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.