Semiconductor element capable of withstanding high voltage
US4402001A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1978 |
| Grant date | Aug 30, 1983 |
| Priority date | — |
| Expiry date | Jan 12, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor element such as a thyristor or a transistor which is capable of withstanding a high voltage comprises a semiconductor substrate of a pnpn-four layer structure (for a thyristor) or of a npn-three layer structure (for a transistor). An intermediate p-type layer is composed of a low concentration layer region located adjacent to an n-type layer and a high concentration layer region located adjacent to the other n-type layer. The high concentration layer region is formed through diffusion of aluminium so that the maximum concentration thereof becomes at least equal to 5.times.10.sup.16 atoms/cm.sup.3. A method of manufacturing such semiconductor element is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.