Method of forming closely spaced lines or contacts in semiconductor devices
US4402128A · kind A · utility
20Cited by
11References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 20, 1981 |
| Grant date | Sep 6, 1983 |
| Priority date | — |
| Expiry date | Jul 20, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming closely spaced conductors suitable for use, for example, in CCD's and MESFET's is described utilizing an edge diffusion technique to convert exposed edge portions of a polycrystalline silicon layer to a non-etchable form. The converted portions are precisely and accurately formed to serve as spacers, thereby defining a narrow gap between adjacent conductive lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.