Inventor · Mesa, AZ, US

Scott C. Blackstone

14Patents
10h-index
12Co-inventors
69Inventor score

Filing activity: Jul 20, 1981 → Feb 25, 2004

Most-cited inventions

PatentTitleAreaCited byStatus
US4578142A Method for growing monocrystalline silicon through mask layer Emerging Cross-Sectional Technologies 69 Expired
US4549926A Method for growing monocrystalline silicon on a mask layer Emerging Cross-Sectional Technologies 42 Expired
US5004705A Inverted epitaxial process Emerging Cross-Sectional Technologies 37 Expired
US5098861A Method of processing a semiconductor substrate including silicide bonding Emerging Cross-Sectional Technologies 34 Expired
US5416354A Inverted epitaxial process semiconductor devices Electricity 33 Expired
US4582559A Method of making thin free standing single crystal films Emerging Cross-Sectional Technologies 26 Expired
US4402128A Method of forming closely spaced lines or contacts in semiconductor devices Emerging Cross-Sectional Technologies 20 Expired
US5164813A New diode structure Electricity 18 Expired
US4586240A Vertical IGFET with internal gate and method for making same Emerging Cross-Sectional Technologies 17 Expired
US4546375A Vertical IGFET with internal gate and method for making same Emerging Cross-Sectional Technologies 11 Expired
US4526665A Method of depositing fully reacted titanium disilicide thin films Electricity 8 Expired
US6723579B2 Semiconductor wafer comprising micro-machined components and a method for fabricating the semiconductor wafer Performing Operations; Transporting 0 Expired
US6797591B1 Method for forming a semiconductor device and a semiconductor device formed by the method Electricity 0 Expired
US7045869B2 Semiconductor wafer comprising micro-machined components Performing Operations; Transporting 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.