Method of making avalanche photodiodes
US4403397A · kind A · utility
19Cited by
13References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1981 |
| Grant date | Sep 13, 1983 |
| Priority date | — |
| Expiry date | Jul 13, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/084
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A quadrant avalanche photodiode with large surface areas is made using photolithographic planar technology. The use of proton bombardment creates semi-insulating material around the quadrants. Semi-insulating material prevents cross-talk between quadrants. The Schottky barrier quadrant detectors were fabricated using GaAs.sub.1-x Sb.sub.x ternary alloys grown epitaxially on heavily doped GaAs substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.