Semiconductor pressure transducer or other product employing layers of single crystal silicon
US4406992A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1981 |
| Grant date | Sep 27, 1983 |
| Priority date | — |
| Expiry date | Apr 20, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0055
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A monocrystalline silicon substrate has formed on a surface a grating pattern manifested by a series of parallel grooves, a layer of dielectric is thermally grown on said surface to replicate said pattern on an opposite surface of said dielectric and a layer of silicon deposited on said opposite surface of said dielectric is single crystal silicon determined by said grating. The structure formed enables the deposited single crystal layer to be selectively treated to provide at least one piezoresistive sensing element to thereby provide a transducer having both the force collector or substrate and the sensing elements of single crystal silicon and dielectrically isolated by means of said dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.