Method for dry-etching
US4412119A · kind A · utility
26Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 1981 |
| Grant date | Oct 25, 1983 |
| Priority date | — |
| Expiry date | May 5, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry-etching method for working SiO.sub.2, phospho-silicate glass, Si, Mo, W, Cr, TiW, Si.sub.3 N.sub.4 or the like by the use of a glow discharge plasma involves the steps of introducing He, Ar, N.sub.2, O.sub.2 or a mixed gas thereof into a reaction chamber from the outside; and effecting the plasma discharge in the reaction chamber so that a reactive gas is liberated from a high molecular resin material arranged in the reaction chamber and containing fluorine atoms. The dry-etching method requires and uses no expensive gas containing a fluorocarbon, but has sufficient etching rate and selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.