Resolution in optical lithography
US4414314A · kind A · utility
11Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1982 |
| Grant date | Nov 8, 1983 |
| Priority date | — |
| Expiry date | Feb 26, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Improved resolution in optical lithography, as used in the very large scale integration of electronic circuits, is obtained by employing a thin film of 4-phenylazo-1-naphthylamine between silicon substrate and overlying layer of light sensitive photoresist. The 4-phenylazo-1-naphthylamine acts as a stable, highly light absorbent medium exhibiting chemical and physical compatibility with the silicon substrate and photoresists with ether-type solvent systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.