Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel
US4415385A · kind A · utility
6Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1981 |
| Grant date | Nov 15, 1983 |
| Priority date | — |
| Expiry date | Aug 7, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/223
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dual-enclosure semi-closed diffusion wherein an outer enclosure is evacuatable and an inner enclosure has a limited aperture, the inner enclosure includes a diffusion vessel having an aperture and a baffle for partially blocking the aperture to leave the limited aperture. The outer enclosure is not directly exposed to impurity vapor and sustains a pressure difference, while the inner enclosure is not subjected to a substantial pressure difference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.