End-point detection in plasma etching or phosphosilicate glass
US4415402A · kind A · utility
41Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1981 |
| Grant date | Nov 15, 1983 |
| Priority date | — |
| Expiry date | Apr 2, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/67
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for determining the completion of removal by plasma etching of phosphorus doped silicon dioxide from an underlying substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.