Thin film electroluminescence structure
US4416933A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1982 |
| Grant date | Nov 22, 1983 |
| Priority date | — |
| Expiry date | Feb 8, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Described herein is a thin film electroluminescence structure comprising a substrate layer (1), a first electrode layer (2), a second electrode layer (10) disposed at a distance from the first electrode layer (2), and a luminescence layer (6) disposed between the first (2) and the second electrode layer (10). Additional layer structures (3 to 5, 7 to 9) are disposed between the electrode layers (2 and 10) and the luminescence layer (6), said structures having current limiting and chemically protecting functions. The invention is based on the idea that it is possible to separate the functions of a chemical barrier and a current limitation from each other, whereby the production of the chemical protection in itself takes place without voltage losses, in other words, with a material whose electrical conductivity is essentially higher than the electrical conductivity of the current limiter. Hence, there is a layer (3, 8) functioning as a chemical barrier on both sides of the luminescence layer (6), whereas there is a current limiting layer only on one side, either as a separate resistive or dielectric layer (8), or as integrated in the material layer constituting the chemical barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.