Apparatus and method for plasma-assisted etching of wafers
US4419201A · kind A · utility
41Cited by
2References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 24, 1981 |
| Grant date | Dec 6, 1983 |
| Priority date | — |
| Expiry date | Aug 24, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/917
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma-assisted etching apparatus and method designed to pattern aluminum or polysilicon, surfaces in the reaction chamber are coated with a layer of aluminum oxide. Contamination of wafers during the etching process is thereby substantially reduced. In practice, this leads to a significant increase in the yield of acceptable chips per wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.