Low temperature process for depositing an oxide dielectric layer on a conductive surface and multilayer structures formed thereby
US4419385A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1981 |
| Grant date | Dec 6, 1983 |
| Priority date | — |
| Expiry date | Sep 24, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The specification discloses a low temperature process for forming an effective insulating layer of a selected oxide on the surface of a chosen conductive substrate. The oxide so formed has low pinhole density, good surface morphology, and good step coverage. In addition, the disclosed process simultaneously minimizes the deformation or restructuring of the surface of a temperature-sensitive conductive substrate, which would produce unwanted hillocks or spikes that degrade the insulating properties of the oxide. In accordance with the disclosed process, the substrate is exposed to a chosen vapor phase reactant in the presence of neutral, charge-free atomic oxygen to produce a reaction between the atomic oxygen and the vapor phase reactant to form the selected oxide, which deposits on the surface of the conductive substrate. Improved multilayer structures comprising multiple layers of conductive material separated by an oxide dielectric layer are formed by the disclosed process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.