Method of manufacturing a semiconductor device
US4423127A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1981 |
| Grant date | Dec 27, 1983 |
| Priority date | — |
| Expiry date | Dec 16, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the manufacture of a semiconductor device wherein a plurality of patterns are successively superimposed and printed on a semiconductor substrate, the invention offers a novel and useful method which includes (a) printing and forming on the semiconductor substrate a first pattern which includes a first alignment mark, (b) in forming a second pattern on the substrate, positioning and printing a second alignment mark contained in a second pattern relative to the first alignment mark on the substrate in such a manner that at least one part of the contour of the first mark is offset from that of the second mark, and is spaced a minute distance from it, and (c) in forming a third pattern on the substrate, positioning and printing a third alignment mark contained in a third pattern in such a manner that a part of the contour of the third alignment mark is offset from a part of the contour of the first alignment mark, and at least a part of the other portion of the contour of the third alignment mark is similarly offset from a part of the contour of the second alignment mark. The invention also offers marks for correctly positioning or registering masks formed by the abovedescribed step…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.