Production of single crystal semiconductors
US4425408A · kind A · utility
18Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1982 |
| Grant date | Jan 10, 1984 |
| Priority date | — |
| Expiry date | Nov 12, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2993
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Polycrystalline semiconductor material is treated to form a skin of a thermally stable substance and melted with the molten material retained by the film. Upon cooling, the material solidifies as single crystal and the skin is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.