Buried heterostructure laser diode
US4425650A · kind A · utility
21Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1981 |
| Grant date | Jan 10, 1984 |
| Priority date | — |
| Expiry date | Apr 10, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A buried heterostructure laser diode and method for making the same wherein an active layer is provided in a semiconductor region forming a mesa stripe, and, except for the top surface portion of the mesa stripe, the side surface portion of the mesa stripe and the remainder are covered by a current-blocking layer. Furthermore, a current-confining layer covers only this current-blocking layer, and a clad layer covers the current-blocking layer and the top surface portion of the mesa stripe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.