Ikuo Mito
19Patents
13h-index
20Co-inventors
74Inventor score
Filing activity: Aug 16, 1979 → Sep 4, 1996
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4318058A | Semiconductor diode laser array | Electricity | 191 | Expired |
| US5325382A | Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser | Electricity | 46 | Expired |
| US5250462A | Method for fabricating an optical semiconductor device | Emerging Cross-Sectional Technologies | 44 | Expired |
| US4751710A | Semiconductor laser device | Electricity | 32 | Expired |
| US5358896A | Method of producing optical integrated circuit | Electricity | 23 | Expired |
| US4425650A | Buried heterostructure laser diode | Electricity | 21 | Expired |
| US4561915A | Process for epitaxial growth on a corrugated wafer | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5796883A | Optical integrated circuit and method for fabricating the same | Electricity | 18 | Expired |
| US4265513A | Light switch | Physics | 16 | Expired |
| US4622674A | Single longitudinal mode semiconductor laser | Electricity | 16 | Expired |
| US4525841A | Double channel planar buried heterostructure laser | Electricity | 15 | Expired |
| US4597085A | Double-channel planar heterostructure semiconductor laser | Electricity | 14 | Expired |
| US4751719A | Distributed feedback semiconductor laser device | Electricity | 14 | Expired |
| US4575851A | Double channel planar buried heterostructure laser with periodic structure formed in guide layer | Electricity | 13 | Expired |
| US4794618A | Distributed feedback laser diode | Electricity | 13 | Expired |
| US4629532A | Method of growing InGaAsP on InP substrate with corrugation | Emerging Cross-Sectional Technologies | 8 | Expired |
| US4618959A | Double heterostructure semiconductor laser with periodic structure formed in guide layer | Electricity | 8 | Expired |
| US4947458A | Optical transmitter utilizing a bistable distributed feedback semiconductor laser | Electricity | 2 | Expired |
| US4799226A | Distributed feedback laser diode comprising an active layer partly adjacent to a waveguide layer | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.