Semiconductor device and method for producing same
US4426657A · kind A · utility
14Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1981 |
| Grant date | Jan 17, 1984 |
| Priority date | — |
| Expiry date | Feb 13, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a protective polyimide film layer for preventing .alpha.-rays from intruding into the device is provided. The polyimide film layer has incorporated therein a salient amount of finely divided filler particles, and is formed on the surface of at least a region wherein the semiconductor element is formed. The polyimide film layer is formed by coating the semiconductor substrate with a liquid polyimide or polyamic acid composition having incorporated therein the finely divided filler particles, according to a screen printing method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.