Semiconductor laser device
US4426703A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1981 |
| Grant date | Jan 17, 1984 |
| Priority date | — |
| Expiry date | Jun 9, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2059
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser device wherein a stripe-shaped impurity-diffused region is disposed in at least parts of semiconductor layers of from a surface semiconductor layer of a semiconductor layer assembly constituting the semiconductor laser device to a second semiconductor layer lying in contact with a first semiconductor layer having an active region, the impurity-diffused region having the same conductivity type as that of the second semiconductor layer and extending at least from the surface semiconductor layer to a depth vicinal to the first semiconductor layer, the impurity region serving as a current path; a semiconductor laser device characterized in that a third semiconductor layer in which the diffusion rate of an impurity for use in the formation of the impurity-diffused region is lower than in the second semiconductor layer is disposed between the surface semiconductor layer and the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.