Surface acoustic wave device and method for manufacturing the same
US4427515A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1981 |
| Grant date | Jan 24, 1984 |
| Priority date | — |
| Expiry date | Apr 23, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H3/08
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave device, a method for manufacturing the same and a manufacturing equipment therefor are disclosed. In the surface acoustic wave device having functional elements such as input and output interdigital electrodes of Al, Al-Si alloy or Al-Cu-Si alloy thin film strips and a grating type reflector, arranged on a piezoelectric substrate and any other bus conductors arranged on the same substrate, at least a portion of the functional elements and the bus conductors having a high frequency metal strip having a line width of no more than 2 .mu.m, at least the metal strip having the width of no more than 2 .mu.m has a film thickness of no less than 0.25 .mu.m at least a portion thereof but no more than an upper limit of an effective film thickness determined by a required characteristic of the surface acoustic wave device, whereby a transfer characteristic of the surface acoustic wave device is compensated and controlled, for example, a reflection efficiency of a grating type reflector is improved or a loss due to a D.C. resistance of the input and output electrodes is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.