Apparatus and method for plasma-assisted etching of wafers
US4427516A · kind A · utility
61Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1983 |
| Grant date | Jan 24, 1984 |
| Priority date | — |
| Expiry date | Mar 4, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/917
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma-assisted etching apparatus and method designed to pattern silicon dioxide in a plasma derived from a mixture of trifluoromethane and ammonia, surfaces in the reaction chamber are coated with a layer of silicon. Contamination of wafers during the etching process is thereby substantially reduced. In practice, this leads to a significant increase in the yield of acceptable chips per wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.