Microwave plasma etching apparatus having fan-shaped discharge
US4430138A · kind A · utility
17Cited by
11References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1980 |
| Grant date | Feb 7, 1984 |
| Priority date | — |
| Expiry date | Apr 7, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3343
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a microwave plasma etching apparatus wherein the surface of a sample is exposed to a plasma generated by microwave discharge, thereby to subject the sample surface to an etching processing; the sample is transported while revolving along a circular orbit in a plasma exposure region, and the section of the plasma exposure region is put into the shape of a fan whose pivot coincides with the central point of the circuit orbit, whereby the enhancement of the etching processing capability and the uniformity of the etching speed are achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.